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Barrier-Engineered Arsenide–Antimonide Heterojunction Tunnel FETs With Enhanced Drive Current

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8 Author(s)
Mohata, D. ; Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA ; Rajamohanan, B. ; Mayer, T. ; Hudait, M.
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In this letter, we experimentally demonstrate enhancement in drive current ION and reduction in drain-induced barrier thinning (DIBT) in arsenide-antimonide staggered-gap heterojunction (hetj) tunnel field-effect transistors (TFETs) by engineering the effective tunneling barrier height Ebeff from 0.58 to 0.25 eV. Moderate-stagger GaAs0.4Sb0.6/In0.65 Ga0.35As (Ebeff = 0.31 eV) and high-stagger GaAs0.35Sb0.65/In0.7Ga0.3As (Ebeff = 0.25 eV) hetj TFETs are fabricated, and their electrical results are compared with the In0.7Ga0.3As homojunction (homj) TFET (Ebeff = 0.58 eV). Due to the 57% reduction in Ebeff, the GaAs0.35Sb0.65/In0.7Ga0.3As hetj TFET achieves 253% enhancement in ION over the In0.7Ga0.3As homj TFET at VDS = 0.5 V and VGS - VOFF = 1.5 V. With electrical oxide thickness (Toxe) scaling from 2.3 to 2 nm, the enhancement further increases to 350 %, resulting in a record high ION of 135 μA/μm and 65% reduction in DIBT at VDS = 0.5 V.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 11 )

Date of Publication:

Nov. 2012

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