Referenced Items are not available for this document.
This paper reviews electrostatic discharge (ESD) investigations on laterally diffused MOS (LDMOS) and drain-extended MOS (DeMOS) devices. The limits of the safe operating area of LDMOS/DeMOS devices and device physics under ESD stress are discussed under various biasing conditions and layout schemes. Specifically, the root cause of early filament formation is highlighted. Differences in filamentary nature among various LDMOS/DeMOS devices are shown. Based on the physical understanding, device optimization guidelines are given. Finally, an outlook on technology scaling is presented.
Published in:
Device and Materials Reliability, IEEE Transactions on
(Volume:12
,
Issue:
4
)
Date of Publication: Dec. 2012
- Page(s):
- 615 - 625
- ISSN :
- 1530-4388
- INSPEC Accession Number:
- 13150337
- Digital Object Identifier :
- 10.1109/TDMR.2012.2220358
- Product Type:
- Journals & Magazines
- Date of Publication :
- 24 September 2012
- Date of Current Version :
- 30 November 2012
- Issue Date :
- Dec. 2012
- Sponsored by :
- IEEE Electron Devices Society
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