Referenced Items are not available for this document.
Ultra-thin silicon oxy-nitride films were created. The films were obtained by using direct N plasma treatment in plasma-chemical reactor with a wide aperture source. Properties of the films were examined by various methods and their good electron quality was confirmed. Features of film growth mechanism are discussed.
Published in:
Micro/Nanotechnologies and Electron Devices (EDM), 2012 IEEE 13th International Conference and Seminar of Young Specialists on
Date of Conference: 2-6 July 2012
- Page(s):
- 45 - 46
- Print ISBN:
- 978-1-4673-2517-2
- INSPEC Accession Number:
- 13015963
- Conference Location :
- Erlagol, Altai
- Digital Object Identifier :
- 10.1109/EDM.2012.6310184
- Product Type:
- Conference Publications
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
