By Topic

A 65 GHz LNA/Phase Shifter With 4.3 dB NF Using 45 nm CMOS SOI

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Uzunkol, M. ; Electr. & Comput. Eng. Dept., Univ. of California San Diego, La Jolla, CA, USA ; Rebeiz, G.M.

This letter presents the first 45 nm CMOS SOI LNA/phase shifter for 60 GHz applications. The 3 b phase shifter is designed using a switched-LC approach and results in only 6 dB loss at 65 GHz. The LNA/phase shifter front-end results in a gain of 6.5 dB, a noise figure of 4.3 dB, and an input <;i>;P<;/i>;1dB of - 13.5 dBm (limited by the amplifier) with a power consumption of 15 mW. This work shows that advanced CMOS processes are essential for low power, medium linearity 60 GHz phased arrays.

Published in:

Microwave and Wireless Components Letters, IEEE  (Volume:22 ,  Issue: 10 )