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In-situ deposited WSix polycide for high frequency transistor gate structures

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4 Author(s)
Lu, Z. ; Motorola Inc., Mesa, AZ, USA ; Golonka, L. ; Elias, R. ; Schenk, R.

This paper describes the implementation of in-situ doped WSix polycide into a manufacturing environment for high frequency communication applications. Process matching, process integration considerations, and statistical characterization of process latitude are described. Outstanding device performance was achieved

Published in:

Advanced Semiconductor Manufacturing Conference and Workshop, 1997. IEEE/SEMI

Date of Conference:

10-12 Sep 1997