By Topic

Advances in Light Trapping for Hydrogenated Nanocrystalline Silicon Solar Cells

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Sivec, L. ; United Solar Ovonic LLC, Troy, MI, USA ; Baojie Yan ; Guozhen Yue ; Owens-Mawson, J.
more authors

We optimized Ag/ZnO back reflectors (BR) for hydrogenated nanocrystalline silicon (nc-Si:H) solar cells by independently changing the textures of the Ag and ZnO layers. We found that Ag/ZnO with textured Ag and thin ZnO provides the highest nc-Si:H solar cell efficiency. Optimized Ag texture with an rms = 40 nm effectively scatters light without seriously degrading the nc-Si:H material quality. Using this type of BR and nc-Si:H cells with ~1-μm-thick intrinsic layer, we obtained a short-circuit current density Jsc = 24.6 mA/cm2 and conversion efficiency Eff = 9.47%. By increasing the nc-Si:H layer to ~3.1 μm, we attained a Jsc >;30 mA/cm2. In order to increase the Jsc further, we increased the texture of the ZnO layer. With highly textured Ag/ZnO BRs, the Jsc was increased. However, the high textures caused poor fill factors, and hence, relatively low efficiency. By using nanocrystalline silicon-oxide (nc-SiOx:H) to replace both the n-layer and dielectric layer, the texture-induced deterioration of nc-Si:H material quality was suppressed and the cell structure was simplified by removing the ZnO, conventional n-layer, n/i buffer layer, and the seed layer. A high Jsc over 27 mA/cm2 and high-cell efficiency of 8.8% were attained using a 2.5-μm-thick nc-Si:H cell with an nc-SiOx:H n-layer.

Published in:

Photovoltaics, IEEE Journal of  (Volume:3 ,  Issue: 1 )