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Investigation of One-Dimensional Thickness Scaling on  \hbox {Cu/HfO}_{x}/\hbox {Pt} Resistive Switching Device Performance

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12 Author(s)
Ming Wang ; Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China ; Hangbing Lv ; Qi Liu ; Yingtao Li
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Scaling is a key issue for resistive switching (RS) memory before commercialization. In this letter, we reveal the impact of electrode diffusion on the device performance as the thickness of RS material scaled. Serious deterioration of on/off ratio and device yield was observed when the material thickness scaled below 3 nm. A new method of two-step electrode deposition accompanied with reoxidization process was employed to overcome this problem. Significant improvements of device performance such as forming free, low RESET current (~1 μA), high on/off ratio (>; 100) and 100% device yield were achieved thereafter.

Published in:

IEEE Electron Device Letters  (Volume:33 ,  Issue: 11 )