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In this letter, we have analyzed the area, perimeter, and corner leakage current components of lateral p+/n-Ge-based diodes with a GeO2 isolation layer, which were fabricated at temperatures below 500 °C. In addition, the effects of forming gas anneal are included, which was done to further reduce the leakage current. It was found that corner leakage was the most dominant source of surface leakage. Perimeter leakage is the next major source of leakage, and it is mostly affected by the quality of the passivation layer. Forming gas annealing of 350 °C gave the most beneficial results in overall leakage current reduction.