Reconciliation of a hot-electron distribution function with the lucky electron-exponential model in silicon

The lucky-electron-exponential model (LE-EM) has been used with some success to model hot-electron-induced degradation. Examination of the LE-EM shows its exponential form is an approximation to the high-energy tails of Monte-Carlo-generated hot-electron distribution functions (HEDFs). It is also suggested that the proper LE-EM mean-free path lambda for use in calculating MOSFET gate leakage current is approximately 50 AA, while the commonly used value of 78 AA is appropriate for modeling phenomena related to impact ionization.<
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