Referenced Items are not available for this document.
A MODFET with two 30-nm-long gates (separated by 40 nm) has been fabricated using ultrahigh-resolution electron-beam lithography. The proximity of the two gate fingers along with the ability to independently bias them results in the following features: (a) tunability of the threshold voltage, (b) enhancement of the transconductance, especially at low current levels, (c) reduction in short-channel effects, and (d) high-voltage gain and cutoff frequency.<
Published in:
Electron Device Letters, IEEE
(Volume:11
,
Issue:
10
)
Date of Publication: Oct. 1990
- Page(s):
- 469 - 471
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 3781458
- Digital Object Identifier :
- 10.1109/55.62999
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Oct. 1990
- Sponsored by :
- IEEE Electron Devices Society
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