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Improvement of aluminum-Si contact performance in native-oxide-free processing

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3 Author(s)
Miyawaki, M. ; Dept. of Electron., Tohoku Univ., Sendai, Japan ; Yoshitake, S. ; Ohmi, T.

The improvement of Al-to-Si contact performance to a low contact resistance of 0.4 mu Omega -cm/sup 2/ and a Schottky junction having an n factor of 1.02 without any thermal treatment has been achieved by a native-oxide-free processing technique. The technique consists of N/sub 2/-gas-sealed wet cleaning using pure water with low dissolved oxygen (20 p.p.b.), wafer transport and loading in an N/sub 2/ environment, and Al deposition by low-energy ion bombardment.<>

Published in:

Electron Device Letters, IEEE  (Volume:11 ,  Issue: 10 )