By Topic

The effects of nuclear radiation on P-channel CCD imagers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
J. P. Spratt ; Full Circle Res. Inc., San Marcos, CA, USA ; B. C. Passenheim ; R. E. Leadon

Analysis of the relationship between the Charge Transfer Efficiency (CTE) and dark current of CCD imagers, and the defects introduced into silicon by displacement damage, led to the prediction that P-channel CCDs would be more radiation hard than conventional N-channel CCDs. Proton and Co60 testing of 1024×640 P-channel CCD imagers confirmed this prediction, showing significant reduction in CTE degradation compared to N-channel devices. Also, dark current data shows that “hot pixel” generation is significantly reduced in these devices

Published in:

Radiation Effects Data Workshop, 1997 IEEE

Date of Conference:

24 Jul 1997