Total ionizing dose effects on 64 Mb 3.3 V DRAMs

64 Mb 3.3 V CMOS DRAMs from two different manufacturers were tested for total dose. Retention time, power supply current, and functionality were used to characterize device response. Burned-in devices failed functionally at lower total dose levels. Results showed that these scaled DRAMs are about twice as hard as older generation 16 Mb commercial DRAMs.