Referenced Items are not available for this document.
64 Mb 3.3 V CMOS DRAMs from two different manufacturers were tested for total dose. Retention time, power supply current, and functionality were used to characterize device response. Burned-in devices failed functionally at lower total dose levels. Results showed that these scaled DRAMs are about twice as hard as older generation 16 Mb commercial DRAMs
Published in:
Radiation Effects Data Workshop, 1997 IEEE
Date of Conference: 24 Jul 1997
- Page(s):
- 97 - 100
- Print ISBN:
- 0-7803-4061-2
- INSPEC Accession Number:
- 5842439
- Conference Location :
- Snowmass Village, CO
- Digital Object Identifier :
- 10.1109/REDW.1997.629805
- Product Type:
- Conference Publications
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