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Characterization of commercial high density memories under low dose rate total ionizing dose (TID) testing for NASA programs

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2 Author(s)
Sharma, A.K. ; NASA Goddard Space Flight Center, Greenbelt, MD, USA ; Sahu, K.

This paper reports the results of low dose rate (0.04-0.08 rads (Si)/sec) total ionizing dose (TID) tests performed on different types of commercial high density memories. The parts used in this evaluation, represented memory technologies such as DRAMs, SRAMs, EEPROMs and Flash memories in 5 V and/or 3.3 V versions from various manufacturers of plastic and ceramic packages

Published in:

Radiation Effects Data Workshop, 1997 IEEE

Date of Conference:

24 Jul 1997

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