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Neutron SEU trends in avionics [memory chips]

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2 Author(s)
Kerness, N. ; Lockheed Martin Federal Syst., Owego, NY, USA ; Taber, A.

Accelerator (proton and neutron) measurements of 44 memory device vintages, along with 13 years of avionics processor experience, indicate that Dynamic Random Access Memories (DRAMs), rather than Static Random Access Memories (SRAMs), may become the future memory of choice for protection against atmospheric neutron single event upset

Published in:

Radiation Effects Data Workshop, 1997 IEEE

Date of Conference:

24 Jul 1997