By Topic

Radiation hard bulk CMOS ROM dose rate upset: detailed analysis technique and results

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
A. Y. Nikiforov ; Specialized Electron. Syst., Moscow, Russia ; V. N. Guminov ; V. A. Telets

The detailed dose rate effects investigation of a Radiation Hard Bulk Complementary Metal-Oxide-Semiconductor Read Only Memory (CMOS ROM) family is performed with the “RADON-5E” pulsed laser simulator. The low-impedance probe technique is used to measure transient responses along the information path inside the chip. It is found that the ROM dose rate upset level is determined by the preamplifier's upset level. The essential dependence of ROM upset duration on the operational frequency is obtained and analyzed

Published in:

Radiation Effects Data Workshop, 1997 IEEE

Date of Conference:

24 Jul 1997