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Radiation hard bulk CMOS ROM dose rate upset: detailed analysis technique and results

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3 Author(s)
Nikiforov, A.Y. ; Specialized Electron. Syst., Moscow, Russia ; Guminov, V.N. ; Telets, V.A.

The detailed dose rate effects investigation of a Radiation Hard Bulk Complementary Metal-Oxide-Semiconductor Read Only Memory (CMOS ROM) family is performed with the “RADON-5E” pulsed laser simulator. The low-impedance probe technique is used to measure transient responses along the information path inside the chip. It is found that the ROM dose rate upset level is determined by the preamplifier's upset level. The essential dependence of ROM upset duration on the operational frequency is obtained and analyzed

Published in:

Radiation Effects Data Workshop, 1997 IEEE

Date of Conference:

24 Jul 1997