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A novel parasitic-element compensation design method with a combination of factorization and coefficient comparison for microwave inverse class-F/class-F amplifiers is proposed. This novel method is applicable to all circuit topologies, including L-C parallel and series resonance circuits, and ladder circuits with arbitrary order of the higher harmonic frequencies. The validity of the proposed method has been checked with a fabricated 1.9 GHz inverse class-F GaN-HEMT power amplifier, considering harmonic frequencies up to the fourth order. A drain efficiency of 77% and power added efficiency of 70% were obtained at 1.88 GHz.