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The ESD robustness of GaN-on-Si Schottky diodes is investigated using on-wafer HBM and TLP. Both forward and reverse diode operation modes are analyzed as a function of device geometry, which strongly impact the corresponding failure mechanism. In forward mode, the anode-to-cathode length reduction and the total device width increase are beneficial for ESD robustness; however, in reverse mode, the ESD robustness does not depend on the total device width and saturates at around 400 V for medium and long anode-to-cathode lengths. The corresponding failure mechanisms are respectively attributed to the current distribution and Si substrate breakdown under forward and reverse mode ESD stresses.
Device and Materials Reliability, IEEE Transactions on (Volume:12 , Issue: 4 )
Date of Publication: Dec. 2012