By Topic

Incomplete Ionization and Carrier Mobility in Compensated p -Type and n-Type Silicon

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
M. Forster ; Apollon Solar, , Lyon, France ; F. E. Rougieux ; A. Cuevas ; B. Dehestru
more authors

In this paper, we show through both calculations and Hall effect measurements that incomplete ionization of dopants has a greater influence on the majority-carrier density in p -type and n-type compensated Si than in uncompensated Si with the same net doping. The factors influencing incomplete ionization at room temperature are shown to be the majority-dopant concentration, its ionization energy and type, and the compensation level. We show that both the majority- and the minority-carrier mobilities are lower in compensated Si than expected by Klaassen's model and that the discrepancy increases with the compensation level at room temperature. The study of the temperature dependence of the majority-carrier mobility shows that there is no compensation-specific mechanism and that the reduction of the screening in compensated Si cannot explain alone the observed gap between experimental and theoretical mobility.

Published in:

IEEE Journal of Photovoltaics  (Volume:3 ,  Issue: 1 )