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Current status and future challenge of oxide semiconductors

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1 Author(s)
Hosono, H. ; Mater. & Struct. Lab., Tokyo Inst. of Technol., Yokohama, Japan

This paper describes my personal view on several hot issues in oxide semiconductors for AM-FPD applications. Topics to be discussed are origin and mechanism for negative bias illumination stress (NBIS) instability of a-IGZO-TFTs, impurity effects, down-sized TFTs and bipolar oxide TFTs. I propose a model for explaining the origin, depth distribution of the large subgap state density above the conduction band maximum. Importance of oxide semiconductors with a small indirect gap is addresses to realize c-MOS based on the band alignment of SnO which was demonstrated to operate as a bipolar TFT.

Published in:

Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2012 19th International Workshop on

Date of Conference:

4-6 July 2012