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Pulsed green laser beam a-Si crystallization and long line beam generation for LCD and OLED TFT-panels manufacturing

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4 Author(s)
Berthold Burghardt ; INNOVAVENT GmbH, Bertha-von-Suttner-Str. 5, 37085 Göttingen, Germany ; Johannes Richter ; Jong Kab Park ; Hans-Jürgen Kahlert

Green laser annealing (GLA) by pulsed solid state lasers offers a variety of options to prepare a-Si thin films for TFT (thin film transistors) flat panel display applications. Recent investigations have shown that the green wavelength can be applied at medium energy density in the range of 300-500mJ/cm2 using a 60-150ns laser pulse. The crystallization leads to p-Si material which is comparable to the near complete melt ELA material which is widely used in the display industry.

Published in:

Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2012 19th International Workshop on

Date of Conference:

4-6 July 2012