By Topic

A Si Nanowire Photovoltaic Device Prepared by Selective Electroless Etching

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Tsai, T.Y. ; Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan ; Chang, S.J. ; Hsueh, T.J. ; Hsu, C.L.
more authors

This study reports the preparation of Si nanowires (SiNWs) by selective electroless etching and fabrication of photovoltaic (PV) cells. It was found that the SiNWs with 3 μm average length and 100 nm average diameter were formed only in the areas not covered by the Cr electrodes. It was also found that average reflectance in the 400-1000 nm wavelength range reduced from 35% to around 2% with the SiNWs. Furthermore, it was found that we could enhance the short-circuit current density of the PV cells from 11.5 to 21.8 mA/cm2 and enhance conversion efficiency of the PV cells from 4.62% to 8.15% using the selective electroless etching.

Published in:

Nanotechnology, IEEE Transactions on  (Volume:11 ,  Issue: 6 )