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A Quasi-Analytical Model for Double-Gate Tunneling Field-Effect Transistors

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2 Author(s)
Pan, A. ; Dept. of Electr. Eng., Univ. of California, Los Angeles, CA, USA ; Chi On Chui

Tunneling field-effect transistors (TFETs) are being widely investigated as a post-CMOS technology; however, despite significant experimental efforts, no quantitatively accurate device models are available. We derive an expression which provides the complete current characteristics of the double-gate TFET and demonstrate its agreement with simulation. This model will be useful in the design and circuit analysis of TFETs.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 10 )