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In this paper, we investigated the electroforming-free resistive switching (RS) behavior in the Ru/RE2O3/TaN (rare-earth, RE, RE = Tm, Yb, and Lu) memory device fabricated with full room temperature process. The conduction mechanism of RE2O3-based memory devices in the low-resistance state is ohmic emission, whereas Tm2O3, Yb2O3, and Lu2O3 memory devices in the high-resistance state are space charge limited conduction (SCLC), ohmic behavior, and SCLC, respectively. The Ru/Lu2O3/TaN device showed a high-resistance ratio of ~ 104, a high device yield of ~70%, a good data retention as long as 105s measured at 85°C, and a reliable endurance for up to 100 cycles, suggesting the optimal chemical defects (metallic Lu and nonlattice oxygen ion) in Lu2O3 film. All of these results suggest that Ru/Lu2O3/TaN structure memory is a good candidate for future nonvolatile RS memory applications.