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Nanoscale RingFETs with effective gate lengths of 22, 32, and 45 nm and inner implanted region radius from 5 to 25 nm with inner or outer drain positions are studied using rotational symmetric 2-D hydrodynamic finite element simulations. In this geometry, the active area is wrapped around itself; hence, the device does not suffer from leakage currents induced by the defects and fixed charges at the side interfaces. The simulation results show that if the inner contact is used as the drain, the impact of the drain fields on the source barrier is significantly reduced as the gate length is scaled below 45 nm.
Date of Publication: Oct. 2012