Referenced Items are not available for this document.
In this letter, we fabricated resistance random access memory in a Pt/GaOx/TiN structure with a bipolar resistance switching characteristic and a bistable resistance ratio of about two orders by I-V sweeping. In order to increase the oxygen ion quantity in the gallium oxide layer, the proposed sample was sputtered in a mixed ambient of Ar and oxygen, and the resistance ratio was enhanced by 2.5 orders. In addition to the resistance ratio, set voltage distribution statistics show that the stability of gallium oxide sputtered in mixed Ar and oxygen gas was better than standard Ar-only sample.
Published in:
Electron Device Letters, IEEE
(Volume:33
,
Issue:
10
)
Date of Publication: Oct. 2012
- Page(s):
- 1387 - 1389
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 13029891
- Digital Object Identifier :
- 10.1109/LED.2012.2206365
- Product Type:
- Journals & Magazines
- Date of Publication :
- 16 August 2012
- Date of Current Version :
- 21 September 2012
- Issue Date :
- Oct. 2012
- Sponsored by :
- IEEE Electron Devices Society
About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies
A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2013 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.
