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Correlated Flicker Noise and Hole Mobility Characteristics of (\hbox {110})/\langle \hbox {110}\rangle Uniaxially Strained SiGe FINFETs

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7 Author(s)
Rajamohanan, B. ; Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA ; Ok, Injo ; Mujumdar, S. ; Hobbs, C.
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Hole mobility and flicker noise characteristics of uniaxially strained ( 110)/〈110〉 Si0.75 Ge0.25 pFINFETs (SSGOI0.25) are investigated in this letter. Equivalent gate referred flicker noise in SSGOI0.25 is dominated by correlated number and mobility fluctuation in the low-bias regime and Hooge mobility fluctuation in the high-bias regime. The extracted Hooge parameter in SSGOI0.25 and in Si pFINFETs is 10-5 and 10-4, respectively. The lower value of the Hooge parameter in SSGOI0.25 pFINFETs is attributed to improved phonon-limited mobility compared to the SOI pFINFETs. SSGOI0.25 FINFETs are found to exhibit the lowest equivalent gate referred flicker noise among any nonplanar devices reported to date.

Published in:

Electron Device Letters, IEEE  (Volume:33 ,  Issue: 9 )