By Topic

GaN-Based LEDs With a Chirped Multiquantum Barrier Structure

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Yu-Yao Lin ; Dept. of Photonics, Nat. Cheng Kung Univ., Tainan, Taiwan ; Chuang, R.W. ; Shoou-Jinn Chang ; Shuguang Li
more authors

We report the fabrication of GaN-based blue light-emitting diodes (LEDs), which separately incorporate the three different electron blocking layers (EBLs), namely, a conventional AlGaN, a uniform multiquantum barrier (UMQB), and a chirped multiquantum barrier (CMQB). On the administration of 20 mA injection current, the corresponding LED output powers measured were 27.5, 27.2, and 25.4 mW for CMQB LED, UMQB LED, and LED, respectively, with a conventional AlGaN EBL. It was also found that the LED with CMQB EBL exhibited a significantly lower drooping effect and a smaller forward bias as compared with LEDs with a conventional AlGaN EBL and UMQB EBL.

Published in:

Photonics Technology Letters, IEEE  (Volume:24 ,  Issue: 18 )