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An Abstract Fault Model for NAND Flash Memory

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4 Author(s)
Ji Hyuck Yun ; Sch. of Comput. Sci. & Eng., Seoul Nat. Univ., Seoul, South Korea ; Jin Hyuk Yoon ; Eyee Hyun Nam ; Sang Lyul Min

We present an abstract fault model for NAND flash memory that describes precisely the effects of various faults during a flash operation. The abstract model is intended to be used to reason about fault-related correctness of key modules of flash memory management software such as a flash translation layer (FTL). We also introduce the concept of “SAO-compliance” to raise awareness about fault-related vulnerabilities of current flash memory management software and to promote much needed research to fix them.

Published in:

Embedded Systems Letters, IEEE  (Volume:4 ,  Issue: 4 )

Date of Publication:

Dec. 2012

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