Referenced Items are not available for this document.
A nonplanar Flash memory architecture with ultrahigh-density (~1.5 × 1012 cm-2) NiSi nanocrystals (NCs) as the floating gate is demonstrated using a triangular-shaped Si nanowire array as the memory transistor channel. The memory device shows good programming, erasing, and retention characteristics. This result suggests that nonplanar devices can extend NC memory scaling limit.
Published in:
Electron Device Letters, IEEE
(Volume:33
,
Issue:
10
)
Date of Publication: Oct. 2012
- Page(s):
- 1390 - 1392
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 13029883
- Digital Object Identifier :
- 10.1109/LED.2012.2206554
- Product Type:
- Journals & Magazines
- Date of Publication :
- 13 August 2012
- Date of Current Version :
- 21 September 2012
- Issue Date :
- Oct. 2012
- Sponsored by :
- IEEE Electron Devices Society
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