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An On-Chip Temperature Sensor With a Self-Discharging Diode in 32-nm SOI CMOS

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2 Author(s)
Golam Chowdhury ; Advanced Micro Devices, Sunnyvale, CA, USA ; A. Hassibi

We report a 39 μm × 27 μm on-chip temperature sensor which uses the temperature-dependent reverse-bias leakage current of a lateral silicon on insulator (SOI) CMOS p-n diode to monitor the thermal profile of a 32-nm microprocessor core. In this sensor, the diode junction capacitance is first charged to a fixed voltage. Subsequently, the diode capacitance is allowed to self-discharge through its temperature-dependent reverse-bias current. Next, by using a time-to-digital-converter circuit, the discharge voltage is converted to a temperature-dependent time pulse, and finally, its width is measured by using a digital counter. This compact temperature sensor demonstrates a 3σ measurement inaccuracy of ±1.95°C across the 5°C-100°C temperature range while consuming only 100 μW from a single 1.65-V supply.

Published in:

IEEE Transactions on Circuits and Systems II: Express Briefs  (Volume:59 ,  Issue: 9 )