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The Temperature Dependence in Nanoresistive Switching of HfAlO

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7 Author(s)
Peng Zhou ; Dept. of Microelectron., Fudan Univ., Shanghai, China ; Li Ye ; Qing-Qing Sun ; Lin Chen
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Critical-temperature regions for resistive switching were found based on HfAlO resistive switching memory. From 5 to 300 K, the resistive switching appears at 60 K, and then a reversible bipolar switching between the two states is observed at above 150 K. It is suggested that the resistive switching characteristics are governed by thermal-assisted percolating conductive paths. The process of low electron occupied region under the external electrical field in different temperature plays a dominated role with the oxygen vacancies movement and recombination in this region. This temperature dependence is originated from different electron transport behavior among oxygen vacancies along conductive filaments at different temperatures.

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Nanotechnology, IEEE Transactions on  (Volume:11 ,  Issue: 6 )