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Optimized Design of a 32-nm CNFET-Based Low-Power Ultrawideband CCII

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4 Author(s)
Imran, A. ; Dept. of Electron. Eng., Aligarh Muslim Univ., Aligarh, India ; Hasan, M. ; Islam, A. ; Abbasi, S.A.

CMOS technology faces significant challenges like tunneling effect, random dopant fluctuation, and line edge roughness at channel lengths below 45 nm. Carbon nanotube-based electronics seems to be a better prospect for extending the saturating Moore's law because of its higher mobility, scalability, and better channel electrostatics. This paper presents an optimum design of a wide bandwidth, high-performance carbon nanotube field-effect transistor (CNFET) realization of a dual-output second-generation current conveyor (CCII±) at a 32-nm technology node. The performance of the CCII module has been thoroughly investigated in terms of number of carbon nanotubes (CNTs), the diameter of CNT and inter-CNT pitch. The parameters of individual CNFET are then modified to further improve the performance. The performance of the optimum CNFET (ITOPT)-based CCII is then compared with CMOS at different supply voltages. It has been found that CNFET-based CCII provides excellent high-frequency response and also consumes lower power at scaled supply voltage compared with its CMOS counterpart.

Published in:

Nanotechnology, IEEE Transactions on  (Volume:11 ,  Issue: 6 )

Date of Publication:

Nov. 2012

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