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RF burn-in of dielectric-charging characteristics of micro-electromechanical capacitive switches

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5 Author(s)
D. Molinero ; Lehigh University, Bethlehem, PA 18015, USA ; C. Palego ; X. Luo ; J. C. M. Hwang
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We report, for the first time, the benefit of RF burn-in at power levels significantly higher than the nominal handling capacity of micro-electromechanical capacitive switches. The benefit appears to be permanent, so that, after burn-in, the switches remain less vulnerable to dielectric charging and, presumably, more reliable. It was speculated that high RF power permanently changed the bond configuration of the silicon-dioxide dielectric, which prevented charge injection under DC bias. Obviously, more detailed study is needed to elucidate the detailed burn-in mechanism. However, this initial result is very encouraging and can facilitate the application of these switches in many RF systems.

Published in:

Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International

Date of Conference:

17-22 June 2012