Referenced Items are not available for this document.
In this paper, the optimum gate control for a peaking cell of a Doherty amplifier is proposed. The proposed gate voltage waveform based on a variation in transcoductance provides a sufficient fundamental current for a peaking cell, which is relevant to the performance of a carrier cell. For further verification, a Doherty amplifier controlled by the proposed method and targeting a 3G LTE base station at 2.6 GHz has been fabricated using a commercially available 120 W GaN (Gallium Nitride) device. The amplifier provides a drain efficiency of 49.2% at an average output power of 45.6 dBm with an 8.5 dB PAPR signal maintaining an adjacent channel leakage power ratio of −48 dBc through digital pre-distortion (DPD) functionality.
Published in:
Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International
Date of Conference: 17-22 June 2012
- Page(s):
- 1 - 3
- ISSN :
- 0149-645X
- E-ISBN :
- 978-1-4673-1086-4
- Print ISBN:
- 978-1-4673-1085-7
- Conference Location :
- Montreal, QC, Canada
- Digital Object Identifier :
- 10.1109/MWSYM.2012.6257775
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