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Highly efficient Doherty amplifier with peaking cell controlled using optimized shaped gate voltage

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6 Author(s)
Kim, Joon Hyung ; Electronics and Telecommunications Research Institute (ETRI), 138 Gajeong-ro, Yuseong, Daejeon, Republic of Korea ; Sung Jun Lee ; Bong Hyuk Park ; Jae Ho Jung
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In this paper, the optimum gate control for a peaking cell of a Doherty amplifier is proposed. The proposed gate voltage waveform based on a variation in transcoductance provides a sufficient fundamental current for a peaking cell, which is relevant to the performance of a carrier cell. For further verification, a Doherty amplifier controlled by the proposed method and targeting a 3G LTE base station at 2.6 GHz has been fabricated using a commercially available 120 W GaN (Gallium Nitride) device. The amplifier provides a drain efficiency of 49.2% at an average output power of 45.6 dBm with an 8.5 dB PAPR signal maintaining an adjacent channel leakage power ratio of −48 dBc through digital pre-distortion (DPD) functionality.

Published in:

Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International

Date of Conference:

17-22 June 2012