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Damage in silicon caused by magnetron ion etching and its recovery effect

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4 Author(s)
Hirai, M. ; Shindengen Electr. Manuf. Co. Ltd., Saitama, Japan ; Iwakuro, Hiroaki ; Ohno, J.-I. ; Kuroda, Tsukasa

Damage in silicon exposed to magnetron plasma has been investigated. The damage was characterized by Schottky barrier height measurements. The depths of the damaged layers were determined as a function of radio frequency (RF) power. It was found that the damaged layer at RF power of 2 kW (self-bias; 270 V) is about 12 nm, and that the damage depths correlate with the self-bias voltage, which is a measure of the energy of ions impinging on the Si surface during plasma exposure. Several methods for removal of the damaged layer have been examined; wet Si etching was found to be the most suitable one

Published in:

Components, Hybrids, and Manufacturing Technology, IEEE Transactions on  (Volume:13 ,  Issue: 4 )

Date of Publication:

Dec 1990

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