Cart (Loading....) | Create Account
Close category search window

Field Emission Tip Array Fabrication Utilizing Geometrical Hindrance in the Oxidation of Si

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
Ke Sun ; Univ. of California, Los Angeles, CA, USA ; Wei Zhang ; Biyun Li ; Jae Young Lee
more authors

Sharpness of field emitter tips is one of the key factors to achieve excellent field emission performance. In order to sharpen the tips to atomic scale, a new method combining the bottom-up process of wafer-scale nanopattern formation via self-assembly of diblock copolymer with the top-down process of anisotropic etching of Si followed by nanocasting is developed. Geometrical hindrance in the oxidation of Si at nanometer scale is exploited to further sharpen the field emission tips.

Published in:

Nanotechnology, IEEE Transactions on  (Volume:11 ,  Issue: 5 )

Date of Publication:

Sept. 2012

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.