Electrical conduction through Cu/sub 2/S corrosion films on copper contacts

Experimental results concerning electrical conduction through the main Cu/sub 2/S film grown on copper samples in a reaction chamber (10 p.p.m. of H/sub 2/S) are reported. The study was based on the analysis of the current-voltage characteristics of the contact point using a fully automatic device which avoids electrical or mechanical breakdowns. It is shown that the contact point has an equivalent circuit composed of a diode, thermoelectric voltage, and contact resistance. The diode parameters resulting from the junction between Cu/sub 2/S (semiconductor) and copper (metal) are determined. A relationship between reverse current density and the thickness of the film (100 to 5000 AA) is reported to explain and predict film breakdown.<
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