Cart (Loading....) | Create Account
Close category search window
 

Ultrananocrystalline Diamond-Based High-Velocity SAW Device Fabricated by Electron Beam Lithography

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
Dow, A.B.A. ; Dept. of Electr. & Comput. Eng., Univ. of Toronto, Toronto, ON, Canada ; Lin, H. ; Schneider, M. ; Petkov, C.
more authors

Surface acoustic wave (SAW) devices have been used extensively for a variety of applications such as telecommunications, electronic devices, and sensors. The emerging need for high-bit data processing at gigahertz frequencies and the requirement of high-sensitivity sensors demand the development of high-efficiency SAW devices. With the objective of exploiting the high acoustic velocity of diamond, we report on an optimally developed nanodiamond thin film with crystal size of 3-5 nm, embedded in an amorphous carbon matrix with grain boundaries of 1-1.5 nm, that is integrated with aluminum nitride (AlN) to extend the operating frequency of SAW transducers. We utilize this attractive property of diamond through facile synthesis of a bilayer structure consisting of sputtered AlN deposited on an ultrananocrystalline diamond (UNCD) film. We report the realization of a high-frequency SAW resonator, using a device architecture based on an UNCD layer. The UNCD films were synthesized using a microwave plasma-enhanced chemical vapor deposition (MWPECVD) technique and were used to enhance the SAW velocity in the AlN thin film, thus opening the way for the application of CMOS compatible high-frequency SAW devices. The deposition and characterization of UNCD thin films are presented and highlighted for the realization of the SAW resonators. The high velocity associated with the UNCD/AlN bilayered approach together with the high lateral resolution of the interdigital transducers obtained with electron beam lithography is essential for the realization of high-frequency SAW devices. The fabricated devices demonstrate resonance frequencies of 11.3 and 6.2 GHz corresponding to spatial periods of 800 and 1600 nm, respectively, yielding a SAW velocity of 9040 and 10 064 m/s, respectively.

Published in:

Nanotechnology, IEEE Transactions on  (Volume:11 ,  Issue: 5 )

Date of Publication:

Sept. 2012

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.