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On the Noise Optimum of FET Broadband Transimpedance Amplifiers

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1 Author(s)
Sackinger, E. ; Ikanos Commun., Inc., Red Bank, NJ, USA

The optimum sizing of the front-end FET in transimpedance amplifiers (TIA) is revisited. Analytical solutions based on a second-order shunt-feedback TIA model that includes the feedback-resistor noise are derived. It is shown that the optimum FET size can be smaller or larger than suggested by the well-known capacitive matching rule, depending on whether the noise optimization is carried out under a constant gain-bandwidth-product constraint or a constant load-capacitance constraint.

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Circuits and Systems I: Regular Papers, IEEE Transactions on  (Volume:59 ,  Issue: 12 )