Referenced Items are not available for this document.
The impact of discrete random dopant fluctuations on 10-nm-long high-performance Schottky-barrier (SB) dopant-segregated (DS) nanowire MOSFETs is investigated through nonequilibrium Green's function quantum simulations. Using DS, nanoscale SB-FETs could outperform standard doped source and drain FETs in terms of ION/IOFF. By reintroducing dopants in SB, however, variability problems are unavoidable and will be strong, at least for thin-width SB-FETs, because of the dopant influence on the SB profile on which the tunneling current is quite sensitive.
Published in:
Electron Device Letters, IEEE
(Volume:33
,
Issue:
9
)
Date of Publication: Sept. 2012
- Page(s):
- 1228 - 1230
- ISSN :
- 0741-3106
- INSPEC Accession Number:
- 12933639
- Digital Object Identifier :
- 10.1109/LED.2012.2203350
- Product Type:
- Journals & Magazines
- Date of Publication :
- 20 July 2012
- Date of Current Version :
- 21 August 2012
- Issue Date :
- Sept. 2012
- Sponsored by :
- IEEE Electron Devices Society
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