By Topic

Discrete Random Dopant Fluctuation Impact on Nanoscale Dopant-Segregated Schottky-Barrier Nanowires

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Aryan Afzalian ; ICTEAM Institute, Université Catholique de Louvain, Louvain-la-Neuve, Belgium ; Denis Flandre

The impact of discrete random dopant fluctuations on 10-nm-long high-performance Schottky-barrier (SB) dopant-segregated (DS) nanowire MOSFETs is investigated through nonequilibrium Green's function quantum simulations. Using DS, nanoscale SB-FETs could outperform standard doped source and drain FETs in terms of ION/IOFF. By reintroducing dopants in SB, however, variability problems are unavoidable and will be strong, at least for thin-width SB-FETs, because of the dopant influence on the SB profile on which the tunneling current is quite sensitive.

Published in:

IEEE Electron Device Letters  (Volume:33 ,  Issue: 9 )