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Improved Carrier Distributions by Varying Barrier Thickness for InGaN/GaN LEDs

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7 Author(s)
S. F. Yu ; Institute of Microelectronics & Department of Electrical Engineering, Advanced Optoelectronic Technology Center, Center for Energy Technology and Strategy, National Cheng Kung University, Tainan, TAIWAN ; Ray-Ming Lin ; S. J. Chang ; J. R. Chen
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In this paper, we minimized efficiency droop by varying barrier thickness for InGaN/GaN multiple quantum wells (MWQs) featuring narrow quantum barriers (NQBs). The external quantum efficiency (EQE) for a light-emitting diode (LED) possessing NQBs improved by 18% at a current density of 200 A·cm-2, compared to that of a conventional LED incorporating a 12-nm-thick barrier. The enhanced carrier distribution resulting from the presence of NQBs was practically approved from another experimental design in this study. We suggest that the NQBs displayed uniform carrier distribution in active layer and decreased the carrier density in the active layer at a critical current density.

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Journal of Display Technology  (Volume:9 ,  Issue: 4 )