By Topic

A 2-GHz Highly Linear Efficient Dual-Mode BiCMOS Power Amplifier Using a Reconfigurable Matching Network

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Hajir Hedayati ; Electr. Eng. Dept., Texas A&M Univ., College Station, TX, USA ; Mohamed Mobarak ; Guillaume Varin ; Philippe Meunier
more authors

A highly linear, efficient, two-stage power amplifier for high-data-rate wireless applications is presented. The linearity is greatly improved by adding an auxiliary amplifier to the main bipolar transistor amplifier in a feed-forward approach to cancel out the nonlinearity terms. The efficiency enhancement is achieved using a switchable biasing and a reconfigurable output-matching network based on the available input power which is monitored by an on-chip envelope detector. The PA is fabricated using 0.25- μm SiGe:C BiCMOS technology and works at 2 GHz with a supply voltage of 2.5 V. The experimental results show a gain of 13 dB and a maximum output power of 23 dBm with a PAE of 38%. The 1-dB output power compression point is 21 dBm with a 32% PAE. The 6-dB power back-off PAE is 23%. The IM3 and IM5 terms are 41 and 44 dB below the fundamental tone for the 21-dBm output power, respectively. The EVM has been measured to be -30.7 dB at 15-dBm average output power using IEEE 802.16e standard WiMAX 64QAM modulated signal. By employing the linearization technique, EVM and ACLR are improved by 4.5 and 5 dB, respectively, for a WiMAX 64QAM 10-MHz signal bandwidth at 14-dBm average output power.

Published in:

IEEE Journal of Solid-State Circuits  (Volume:47 ,  Issue: 10 )