By Topic

\hbox {MoS}_{2} Nanoribbon Transistors: Transition From Depletion Mode to Enhancement Mode by Channel-Width Trimming

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Han Liu ; School of Electrical and Computer Engineering and the Birck Nanotechnology Center, Purdue University , West Lafayette, IN, USA ; Jiangjiang Gu ; Peide D. Ye

We study the channel width scaling of back-gated MoS2 metal-oxide-semiconductor field-effect transistors from 2 μm down to 60 nm. We reveal that the channel conductance scales linearly with channel width, indicating no evident edge damage for MoS2 nanoribbons with widths down to 60 nm as defined by plasma dry etching. However, these transistors show a strong positive threshold voltage (VT) shift with narrow channel widths of less than 200 nm. Our results also show that transistors with thinner channel thicknesses have larger VT shifts associated with width scaling. Devices fabricated on a 6-nm-thick MoS2 crystal underwent the transition from depletion mode to enhancement mode.

Published in:

IEEE Electron Device Letters  (Volume:33 ,  Issue: 9 )