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Patterned Bit Cell Arrangement and Broadening of Switching Field Distribution Caused by Magneto-Static Interactions

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4 Author(s)
Shu Xu ; Wuhan Nat. Lab. for Optoelectron., Huazhong Univ. of Sci. & Technol., Wuhan, China ; Jie Liu ; Jincai Chen ; Bo Liu

Patterned media technology is a promising approach for future high density magnetic data storage. The bit-to-bit spacing becomes smaller as recording density increases. As a result, the magneto-static field (Hd) from the surrounding bits becomes stronger, and contributes more to the broadening of the switching field distribution (SFD) of targeted bit. This paper reports the investigations between possible bit-cell arrangements and SFD broadening caused by the magneto-static field. The possible bit-cell arrangements are categorized into three groups-square arrangement, isosceles triangular arrangement, and equilateral triangular arrangement. The influences of manufacturing induced deviations, including bit-cell position offset and bit-cell size variation, over the Hd are also simulated. The results suggested that isosceles triangular arrangement can reduce the SFD broadening, without increasing the requirement on track positioning accuracy.

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Magnetics, IEEE Transactions on  (Volume:49 ,  Issue: 1 )