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Multigate Buckled Self-Aligned Dual Si Nanowire MOSFETs on Bulk Si for High Electron Mobility

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5 Author(s)
M. Najmzadeh ; Nanoelectronic Devices Laboratory (Nanolab), Swiss Federal Institute of Technology, Lausanne, Switzerland ; Y. Tsuchiya ; D. Bouvet ; W. Grabinski
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In this paper, we report for the first time making multi-gate buckled self-aligned dual Si nanowires including two sub-100 nm cross-sectional cores on bulk Si substrate using optical lithography, hard mask/spacer technology, and local oxidation. ≈0.8 GPa uniaxial tensile stress was measured on the buckled dual nanowires using micro-Raman spectroscopy. The buckled multigate dual Si nanowires show excellent electrical characteristics, e.g., 62 mV/decade and 42% low-field electron mobility enhancement due to uniaxial tensile stress in comparison to the non-strained device, all at VDS = 50 mV and 293 K.

Published in:

IEEE Transactions on Nanotechnology  (Volume:11 ,  Issue: 5 )