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The authors report the formation of air void arrays with controlled size and density embedded in the GaN epitaxial layers by patterning and re-growth. It was found that wizard’s-hat-shaped voids were formed after coalescence. GaN-based light-emitting diodes (LEDs) with such air void arrays were also fabricated and were found to achieve a 56% enhancement in LED output power with the embedding of 3 μm × 3 μm air void arrays due to the effective scattering and re-direction of photons emitted from the active region of the LEDs.