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Silicon Carbide Power Transistors: A New Era in Power Electronics Is Initiated

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3 Author(s)
Rabkowski, J. ; Electr. Machines & Power Electron. Lab., KTH R. Inst. of Technol., Stockholm, Sweden ; Peftitsis, D. ; Nee, H.-P.

During recent years, silicon carbide (SiC) power electronics has gone from being a promising future technology to being a potent alternative to state-of-the-art silicon (Si) technology in high-efficiency, highfrequency, and high-temperature applications. The reasons for this are that SiC power electronics may have higher voltage ratings, lower voltage drops, higher maximum temperatures, and higher thermal conductivities. It is now a fact that several manufacturers are capable of developing and processing high-quality transistors at cost that permit introduction of new products in application areas where the benefits of the SiC technology can provide significant system advantages.

Published in:

Industrial Electronics Magazine, IEEE  (Volume:6 ,  Issue: 2 )

Date of Publication:

June 2012

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