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40 Gb/s Low-Power 4:1 Multiplexer Based on Resonant Tunneling Diodes

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4 Author(s)
Jongwon Lee ; Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Daejeon, South Korea ; Sunkyu Choi ; Jooseok Lee ; Kyounghoon Yang

An integrated resonant tunneling diode (RTD)-based 4:1 multiplexer core for low power consumption and high-speed operation is proposed. The proposed 4:1 multiplexer core is designed based on a power-efficient negative differential resistance (NDR) circuit topology, which actively utilizes the unique NDR characteristics of the RTD. The proposed IC is comprised of two RTD-based 2:1 multiplexers and a 2:1 selector. The designed IC has been fabricated using an InP RTD/heterojunction bipolar transistor (HBT) monolithic microwave integrated circuit technology, which is optimized by introducing an undercut process in the stacked RTD/HBT epistructure. A low power consumption of 75 mW at a supply voltage of -2.9 V has been achieved at a speed up to 40 Gb/s. The implemented IC, which has a higher complexity than monolithically integrated RTD/transistor digital circuits reported to date, is the first demonstration of a low-power high-speed 4:1 multiplexer IC based on an NDR device technology.

Published in:

Nanotechnology, IEEE Transactions on  (Volume:11 ,  Issue: 5 )

Date of Publication:

Sept. 2012

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