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Using selective voltage binning to maximize yield

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2 Author(s)
Lichtensteiger, S. ; IBM Corp. Syst. & Technol. Group, Essex Junction, VT, USA ; Bickford, J.

Yield loss associated with leakage screens is increasing as products migrate to technologies with thinner gate oxide and more aggressive lithography. Product competitiveness requires meeting low power and when products have exhausted design options, tighter than 3 sigma fast leakage screens are implemented to reduce power which can result in significant yield loss. Selective Voltage Binning (SVB) provides a way to interlock a lower operating voltage in the system with process window information so that faster parts can be run in the system at a lower voltage avoiding the yield loss associated with custom leakage screens.

Published in:

Advanced Semiconductor Manufacturing Conference (ASMC), 2012 23rd Annual SEMI

Date of Conference:

15-17 May 2012

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